Title :
Performance of the new generation emitter turn-off (ETO) thyristor
Author :
Zhang, Bin ; Huang, Alex Q. ; Liu, Yunfeng ; Atcitty, Stanley
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The emitter turn-off thyristor (ETO) is a GTO-MOSFET hybrid high power device that can achieve unity turnoff gain condition. A new generation of ETO rated at 4500 V and 4000 A has recently been developed. The improvements are made in the area of manufacturability, functionality and performance. 4000 A snubberless turn-off capability and low conduction loss are achieved in the new ETO using novel circuits and housing design. This paper presents the design, characteristics, and the performance of the new ETO.
Keywords :
power MOSFET; power semiconductor switches; thyristors; 4000 A; 4500 V; GTO-MOSFET hybrid high power device; characteristics; conduction loss; design; emitter turn-off thyristor performance; functionality; manufacturability; snubberless turn-off capability; unity turn-off gain condition; Anodes; Cathodes; Circuits; Frequency; MOSFETs; Manufacturing; Power engineering and energy; Switches; Thyristors; Voltage;
Conference_Titel :
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location :
Pittsburgh, PA, USA
Print_ISBN :
0-7803-7420-7
DOI :
10.1109/IAS.2002.1044140
