Title :
A parametric device study for SiC power electronics
Author :
Ozpineci, Burak ; Tolbert, Leon M. ; Islam, Syed K. ; Hasanuzzaman, Md
Author_Institution :
Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA
Abstract :
Materials and device researchers build switching devices for the circuits researchers to use in their circuits, but they rarely know how and where the devices are going to be used. The circuits people, including power electronics researchers, take the devices as black boxes and use them in their circuits not knowing much about the inside of the devices. The best way to design optimum devices is an interactive design where people designing and building the devices have a close interaction with the people who use them. This study covers the circuit aspects of the SiC power device development. As a contribution to the above-mentioned interactive design, in this paper, the device parameters, which need to be improved in order to design better devices, are discussed.
Keywords :
optimisation; power convertors; power semiconductor switches; semiconductor device models; silicon compounds; switching circuits; SiC; SiC power electronics; optimum device design; parametric device study; power convertors; switching devices; Buildings; Circuit testing; DC-DC power converters; Fabrication; Hybrid electric vehicles; Inverters; Laboratories; Power electronics; Silicon carbide; Switching circuits;
Conference_Titel :
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location :
Pittsburgh, PA, USA
Print_ISBN :
0-7803-7420-7
DOI :
10.1109/IAS.2002.1044142