Title :
A novel W-band monolithic push-pull power amplifier
Author :
Wang, H. ; Dow, G.S. ; Aust, M. ; Chang, K.W. ; Lai, R. ; Biedenbender, M. ; Streit, D.C. ; Allen, B.R.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A monolithic W-band push-pull two-stage power amplifier has been developed using 0.1 pm AlGaAs-InGaAs-GaAs pseudomorphic T-gate power HEMT technology. This novel design utilizes the push-pull scheme to take the advantage of a virtual ground in a push-pull HEMT device pair which eliminates the via hole inductance, and improves the power amplifier performance at millimeter-wave frequency. The measurement results show that a small signal gain of 12 dB, an output power of 19.4 dBm, and a power added efficiency of 13.3% have been achieved at 90 GHz, and presents state-of-the-art performance for a monolithic power amplifiers at this frequency. To our knowledge, this is the first reported monolithic push-pull amplifier at millimeter-wave frequencies.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; millimetre wave amplifiers; millimetre wave power amplifiers; power HEMT; power amplifiers; power integrated circuits; 0.1 micron; 12 dB; 13.3 percent; 90 GHz; AlGaAs-InGaAs-GaAs; EHF; MIMIC; T-gate power HEMT; W-band; millimeter-wave frequency; monolithic push-pull power amplifier; power HEMT technology; pseudomorphic HEMT; two-stage power amplifier; Frequency measurement; Gain measurement; HEMTs; Inductance; Millimeter wave measurements; Millimeter wave technology; Performance gain; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636935
