Title :
Effect of active medium inhomogeneity on lasing characteristics of InAs/InP quantum-dash lasers
Author :
Khan, Zahed M. ; Ng, Tien K. ; Schwingenschlögl, Udo ; Ooi, Boon S.
Author_Institution :
Div. of Phys. Sci. & Eng., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Abstract :
The authors report on the effect of quantum-dash (Qdash) inhomogeneity on the characteristics of InAs/InP Qdash laser utilizing a single state rate equation model. The inhomogeneity is assumed to follow the Gaussian approximation. From our observation, an increased in Qdash inhomogeneity results in increasing of threshold current density and redshifting of the peak lasing wavelength. The lasing linewidth of the Qdash lasers has also found to increase under large injection current, attaining a full width at half maximum (FWHM) of ~ 17 nm.
Keywords :
Gaussian distribution; III-V semiconductors; indium compounds; quantum dash lasers; red shift; Gaussian approximation; Qdash inhomogeneity; active medium inhomogeneity; large injection current; lasing characteristics; peak lasing wavelength; quantum dash lasers; redshift; single state rate equation model; threshold current density; Equations; Laser modes; Laser theory; Mathematical model; Nonhomogeneous media; Quantum dot lasers;
Conference_Titel :
Photonics Global Conference (PGC), 2010
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-9882-6
DOI :
10.1109/PGC.2010.5705929
