Title :
Wafer fab line yield improvement at TriQuint semiconductor
Author_Institution :
TriQuint Semicond. Inc., Beaverton, OR, USA
Abstract :
This paper describes TriQuint´s yield improvement efforts and results for our ion implanted, recessed-gate, MESFET IC processes. It discusses how we approached fab line yield improvement, the techniques that were utilized, some of the lessons learned, and the results achieved from 1989 to present.
Keywords :
MESFET integrated circuits; integrated circuit yield; ion implantation; TriQuint semiconductor; ion implanted recessed-gate MESFET IC processes; wafer fab line yield; Electrical resistance measurement; FETs; Gallium arsenide; Implants; MESFET integrated circuits; Manufacturing processes; Resistors; Semiconductor device manufacture; Semiconductor materials; Thin film inductors;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636943
