• DocumentCode
    2404096
  • Title

    Wafer fab line yield improvement at TriQuint semiconductor

  • Author

    Smith, T.M.

  • Author_Institution
    TriQuint Semicond. Inc., Beaverton, OR, USA
  • fYear
    1994
  • fDate
    16-19 Oct. 1994
  • Firstpage
    115
  • Lastpage
    118
  • Abstract
    This paper describes TriQuint´s yield improvement efforts and results for our ion implanted, recessed-gate, MESFET IC processes. It discusses how we approached fab line yield improvement, the techniques that were utilized, some of the lessons learned, and the results achieved from 1989 to present.
  • Keywords
    MESFET integrated circuits; integrated circuit yield; ion implantation; TriQuint semiconductor; ion implanted recessed-gate MESFET IC processes; wafer fab line yield; Electrical resistance measurement; FETs; Gallium arsenide; Implants; MESFET integrated circuits; Manufacturing processes; Resistors; Semiconductor device manufacture; Semiconductor materials; Thin film inductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
  • Conference_Location
    Phildelphia, PA, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-1975-3
  • Type

    conf

  • DOI
    10.1109/GAAS.1994.636943
  • Filename
    636943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2404096