Manufacturability of dummy-gate self-aligned LDD GaAs MESFETs for high volume production

Author

Nakajima, S. ; Ishii, G. ; Saito, Y. ; Kuwata, N. ; Fukuzawa, T. ; Koike, K. ; Nishizawa, H.

Author_Institution

Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

119

Lastpage

122

Abstract

A manufacturable self-aligned LDD GaAs MESFET process called SRD has been developed. In this process, we controlled the fabrication conditions from lot to lot. Excellent control of the device characteristics not only across the wafer but also from wafer to wafer is obtained. The controllability of Vth is within /spl plusmn/50 mV. The standard deviation of Vth across the 3-in wafer is less than 30 mV for 0.5 /spl mu/m devices. In addition, other parameters such as g/sub m/, g/sub d/ are also well controlled within /spl plusmn/7% (Max-Min).

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor technology; 0.5 micron; 3 in; GaAs; SRD; controllability; fabrication; high volume production; manufacturability; self-aligned LDD GaAs MESFETs; single resist-layer dummy-gate; threshold voltage; Controllability; Etching; Gallium arsenide; MESFETs; Manufacturing processes; Production; Resists; Scanning electron microscopy; Silicon compounds; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636944

Filename

636944