Title :
Manufacturing technology for high performance HBT linear power amplifiers
Author :
Yang, L.W. ; Komiak, J.J. ; Smith, D.P. ; Kao, M.Y. ; Brozovich, R.S. ; Nordheden, K.J. ; Helms, D.R. ; Houston, D.E. ; Bardsley, F.R.
Author_Institution :
Martin Marietta Labs., Syracuse, NY, USA
Abstract :
A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone saturated power of the MMIC achieved 36.4% PAE at 10 GHz. The IMD is 30 dBc at 5 dB back-off from 2 dB gain compression.
Keywords :
MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit metallisation; integrated circuit yield; intermodulation distortion; 0.17 W; 10 GHz; 36.4 percent; 6 GHz; 72 percent; HBT linear power amplifiers; IMD; MMIC process technology; PAE; emitter-to-base realigned approach; gain compression; intermodulation distortion; power MMICs; power added efficiency; power transistor cell; single-step thick emitter metallization; two tone saturated power; yield; Current density; Fabrication; Heterojunction bipolar transistors; High power amplifiers; Linearity; MMICs; Manufacturing processes; Microwave devices; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636947
