Manufacturing technology for high performance HBT linear power amplifiers

Author

Yang, L.W. ; Komiak, J.J. ; Smith, D.P. ; Kao, M.Y. ; Brozovich, R.S. ; Nordheden, K.J. ; Helms, D.R. ; Houston, D.E. ; Bardsley, F.R.

Author_Institution

Martin Marietta Labs., Syracuse, NY, USA

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

127

Lastpage

130

Abstract

A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone saturated power of the MMIC achieved 36.4% PAE at 10 GHz. The IMD is 30 dBc at 5 dB back-off from 2 dB gain compression.

Keywords

MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit metallisation; integrated circuit yield; intermodulation distortion; 0.17 W; 10 GHz; 36.4 percent; 6 GHz; 72 percent; HBT linear power amplifiers; IMD; MMIC process technology; PAE; emitter-to-base realigned approach; gain compression; intermodulation distortion; power MMICs; power added efficiency; power transistor cell; single-step thick emitter metallization; two tone saturated power; yield; Current density; Fabrication; Heterojunction bipolar transistors; High power amplifiers; Linearity; MMICs; Manufacturing processes; Microwave devices; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636947

Filename

636947