2.3 V operation GaAs power MESFET with 68% power-added efficiency

Author

Jong-Lam Lee ; Jae Kyoung Mun ; Haecheon Kim ; Jae Jin Lee ; Hyung-Moo Park ; Sin-Chong Park

Author_Institution

Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

133

Lastpage

136

Abstract

A state-of-the-art GaAs power MESFET operating at a drain bias of 2.3 V has been developed using the low-high doped channel structure. The device has 0.8-/spl mu/m gate length and 21-mm gate width. The power performance tested at a 2.3 V drain bias under 900 MHz operation frequency was output power of 31.3-dBm with 11.3-dB gain and 69-percent power-added efficiency. A third-order intercept point was evaluated to be 50.7-dBm. A Linearity Figure-of-Merit of 55.6 was recorded for 21-mm-wide FET.

Keywords

III-V semiconductors; UHF field effect transistors; doping profiles; gallium arsenide; power MESFET; power field effect transistors; semiconductor doping; 0.8 micron; 11.3 dB; 2.3 V; 21 mm; 68 percent; 900 MHz; GaAs; gate length; gate width; linearity figure-of-merit; low-high doped channel structure; output power; power MESFET; power-added efficiency; third-order intercept point; Breakdown voltage; FETs; Gallium arsenide; Knee; Low voltage; MESFETs; Power generation; Substrates; Superlattices; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636948

Filename

636948