Title :
2.3 V operation GaAs power MESFET with 68% power-added efficiency
Author :
Jong-Lam Lee ; Jae Kyoung Mun ; Haecheon Kim ; Jae Jin Lee ; Hyung-Moo Park ; Sin-Chong Park
Author_Institution :
Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
A state-of-the-art GaAs power MESFET operating at a drain bias of 2.3 V has been developed using the low-high doped channel structure. The device has 0.8-/spl mu/m gate length and 21-mm gate width. The power performance tested at a 2.3 V drain bias under 900 MHz operation frequency was output power of 31.3-dBm with 11.3-dB gain and 69-percent power-added efficiency. A third-order intercept point was evaluated to be 50.7-dBm. A Linearity Figure-of-Merit of 55.6 was recorded for 21-mm-wide FET.
Keywords :
III-V semiconductors; UHF field effect transistors; doping profiles; gallium arsenide; power MESFET; power field effect transistors; semiconductor doping; 0.8 micron; 11.3 dB; 2.3 V; 21 mm; 68 percent; 900 MHz; GaAs; gate length; gate width; linearity figure-of-merit; low-high doped channel structure; output power; power MESFET; power-added efficiency; third-order intercept point; Breakdown voltage; FETs; Gallium arsenide; Knee; Low voltage; MESFETs; Power generation; Substrates; Superlattices; Transconductance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636948
