DocumentCode :
2404220
Title :
Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators
Author :
Pantouvaki, M. ; Yu, H. ; Verheyen, P. ; Lepage, G. ; Bogaerts, W. ; Moelants, M. ; Wouters, J. ; Radisic, D. ; Vandervorst, A. ; Absil, P. ; Van Campenhout, J.
Author_Institution :
imec, Leuven, Belgium
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
44
Lastpage :
45
Abstract :
Silicon ring modulators with interdigitated diodes demonstrate 7.5 dB extinction ratios at 3 dB insertion loss for 1 Vpp, a 4.5 dB improvement over the lateral diode design, and can operate up to 10 Gb/s.
Keywords :
elemental semiconductors; optical design techniques; optical losses; optical modulation; silicon; Si; bit rate 10 Gbit/s; interdigitated diode design; lateral diode design; loss 3 dB; low-voltage low-loss ring modulators; voltage 1 V; Extinction ratio; Insertion loss; Optical losses; Optical modulation; Optical waveguides; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Interconnects Conference, 2012 IEEE
Conference_Location :
Santa Fe, NM
Print_ISBN :
978-1-4577-1620-1
Type :
conf
DOI :
10.1109/OIC.2012.6224455
Filename :
6224455
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2404220
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