Title :
GaAs multi-chip power amplifier module using a multi-layer TAB tape
Author :
Notani, Y. ; Nakajima, Y. ; Ohta, Y. ; Mitsui, Y. ; Nakayama, M. ; Murakami, S. ; Orisaka, S. ; Ishihara, O. ; Mitsui, S.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A novel packaging technology using a multi-layer Tape Automated Bonding (TAB) tape was developed for a GaAs multi-chip module to be employed in radio units of mobile telephones. The microwave properties of the multi-layer TAB tape were first evaluated using a ring resonator and a through-line. Then, the TAB tape was applied to a 900 MHz-band high power amplifier. It consists of two MMIC chips and an output matching circuit formed on the TAB tape. The amplifier module delivered a saturated output power of 31.6 dBm with a power added efficiency of 54.9% at 933 MHz with a supply voltage Vdd of 3.3 V. These results suggest that the TAB tape assembly has a high potentiality for realizing a thin and light weight RF unit in mobile communication terminals with low cost.
Keywords :
III-V semiconductors; UHF power amplifiers; cordless telephone systems; gallium arsenide; impedance matching; integrated circuit packaging; mobile radio; multichip modules; radio transmitters; tape automated bonding; 3.3 V; 54.9 percent; 933 MHz; GaAs; MMIC chips; high power amplifier; microwave properties; mobile communication terminals; mobile telephones; multi-chip power amplifier module; multi-layer TAB tape; output matching circuit; packaging technology; power added efficiency; radio units; ring resonator; saturated output power; Bonding; Circuits; Gallium arsenide; High power amplifiers; Impedance matching; MMICs; Optical ring resonators; Packaging; Power amplifiers; Telephony;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636952
