Low voltage, high efficiency class E GaAs power amplifiers for mobile communications

Author

Sowlati, T. ; Salama, C.A.T. ; Sitch, J. ; Rabjohn, G. ; Smith, D.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

171

Lastpage

174

Abstract

In this paper a class E power amplifier for mobile communications is presented. The advantages of class E over class B and class C power amplifiers in a low voltage design is discussed. A fully integrated class E power amplifier operating at 835 MHz is designed, fabricated and tested. The circuit is implemented in a self-aligned-gate, depletion mode GaAs MESFET process. The amplifier delivers 24 dBm power to the load with a power added efficiency greater than 50% at a supply voltage of 2.5 V. The power dissipated in the integrated matching networks is 15 times the power dissipated in the transistors.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; field effect MMIC; field effect analogue integrated circuits; gallium arsenide; land mobile radio; power amplifiers; 2.5 V; 50 percent; 835 MHz; GaAs; MESFET MMIC; UHF IC; class E; depletion mode MESFET process; high efficiency; low voltage design; mobile communications; power amplifiers; self-aligned-gate; Circuits; Frequency; Gallium arsenide; High power amplifiers; Low voltage; Mobile communication; Power amplifiers; Power supplies; Switches; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636960

Filename

636960