• DocumentCode
    2404336
  • Title

    Improved quantum efficiency of GaInAsP/InP top air-clad lateral current injection lasers

  • Author

    Futami, Mitsuaki ; Shinno, Keisuke ; Shindo, Takahiko ; Doi, Kyohei ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    34
  • Lastpage
    35
  • Abstract
    An internal quantum efficiency (ηi) of GaInAsP/InP top air-clad lateral current injection (LCI) lasers was considerably improved by covering the top surface with 50-nm thick InP cap layer. As the result, threshold current of 6.7 mA and the differential quantum efficiency of 56% were attained for five-quantum-wells (QWs) LCI laser with the cavity length of 500 μm and the stripe width of 1.5 μm.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; GaInAsP-InP; LCI laser; cap layer; cavity length; current 6.7 mA; quantum efficiency; quantum-wells; size 1.5 mum; size 50 nm; size 500 mum; threshold current; top air-clad lateral current injection lasers; Cavity resonators; Distributed feedback devices; Indium phosphide; Laser feedback; Semiconductor lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Interconnects Conference, 2012 IEEE
  • Conference_Location
    Santa Fe, NM
  • Print_ISBN
    978-1-4577-1620-1
  • Type

    conf

  • DOI
    10.1109/OIC.2012.6224460
  • Filename
    6224460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2404336