Title :
A high efficiency commercial GaAs MESFET power amplifier for PCM/CIA applications at 2.45 GHz
Author :
Quach, T. ; Staudinger, J.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Abstract :
A low cost commercial, high performance two stage GaAs MESFET power amplifier has been developed for the 2.4 GHz Industrial, Scientific, and Medical (ISM) frequency band targeting portable wireless LAN applications. The amplifier is housed in a low cost plastic surface mount package, making it well suited for insertion into low profile PCM/CIA formats. Measured performance has demonstrated 24 dBm output power with greater than 65% power added efficiency when operated in gain compression with a 5 volt supply. Harmonic rejection greater than 18 dBc and 30 dBc is achieved on 2nd and 3rd order harmonics, respectively. On chip bias and power level control circuitry allows adjusting the output power level over a 20 dBc range with a single analog control voltage. Stringent cost goals are achieved by limiting chip size, choosing inexpensive plastic packaging, and by selecting an appropriate amplifier topology which places some components off chip.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; field effect analogue integrated circuits; gallium arsenide; mobile radio; power amplifiers; power integrated circuits; surface mount technology; wireless LAN; 2.4 GHz; 5 V; 65 percent; GaAs; MESFET power amplifier; PCM/CIA applications; UHF amplifier; high efficiency commercial amplifier; low cost plastic SMD package; low profile PCM/CIA formats; portable wireless LAN applications; power level control circuitry; two stage amplifier; Costs; Frequency; Gallium arsenide; High power amplifiers; MESFETs; Phase change materials; Plastic packaging; Power amplifiers; Power generation; Wireless LAN;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636962
