Title :
Conformity optimization for metal interconnections in MOS technologies
Author :
Cernica, Ileana ; Dunare, Camelia ; Manea, Elena ; Ionascu, Georgeta ; Dunare, S.
Author_Institution :
IMT-Bucharest, Romania
Abstract :
Presented study was focus on optimization of planarization and metal conformity on steps in MOS technology. The experiment regards a three fold problem: the structure of the planarization silicon dioxide thin film in order to optimized the slope of the contact windows, the metal used and the conformity of metal interconnections. We studied the profiles of contact windows configured in several composed silicon dioxide films (thermal SiO2 and APCVD SiO2) using α-step measurements. Then, after metal deposition and configuration we observed by SEM investigations the conformity of metal films on steps (contact, cracking, thinning on edge of the window). Finally, we proposed a sequence of composed planarization film (thermal SiO2 and APCVD SiO2 undoped and phosphorous doped) and metallization proved by α-step, SEM and functional investigations to be an optimized solution
Keywords :
MOS integrated circuits; conformal coatings; integrated circuit interconnections; α-step measurement; APCVD SiO2; MOS technology; SEM; SiO2; conformity optimization; contact window; metal interconnection; metallization; planarization; silicon dioxide thin film; thermal SiO2; Artificial intelligence; Cleaning; Contacts; Dielectric measurements; Metallization; Planarization; Semiconductor films; Semiconductor thin films; Silicon compounds; Testing;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733757
