Title :
A 40 GHz D-type flip-flop using AlGaAs/GaAs HBTs
Author :
Kuriyama, Y. ; Sugiyama, T. ; Hongo, S. ; Akagi, J. ; Tsuda, K. ; Iizuka, N. ; Obara, M.
Author_Institution :
Mater. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
We report a master-slave D-type flip-flop (D-FF) circuit implemented with AlGaAs/GaAs HBTs. The operation of this IC was confirmed up to 40 GHz, which is the highest speed in flip-flop circuits including static dividers.
Keywords :
III-V semiconductors; aluminium compounds; bipolar logic circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; 40 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBTs; D-FF circuit; high speed IC; master-slave D-type flip-flop; static dividers; Bipolar transistors; Circuit testing; Current density; Doping; Flip-flops; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Very high speed integrated circuits; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636964
