New result in 6H SiC “site-competition” epitaxy

Author

Zelenin, V.V. ; Lebedev, A.A. ; Rastegaeva, M.G. ; Davydov, D.V. ; Chelnokov, V.E.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

Volume

2

fYear

1998

fDate

6-10 Oct 1998

Firstpage

357

Abstract

The investigation of the 6H-SiC layers grown by CVD in methane-silane-hydrogen system shows that with increase of C/Si ratio in gas phase there is the inversion of type of conductivity. I-DLTS study of grown p-type conductivity layers shows that a main contribution to N _A-N_D gives a deep acceptor centers, which are close to parameters of usual background centers in layers prepared by sublimation epitaxy method

Keywords

deep level transient spectroscopy; electrical conductivity; impurity states; semiconductor epitaxial layers; semiconductor growth; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; 6H-SiC epitaxial layer; CVD growth; SiC; background doping; deep acceptor center; electrical conductivity; i-DLTS; methane-silane-hydrogen system; site-competition epitaxy; wide bandgap semiconductor; Argon; Capacitance-voltage characteristics; Conductivity; Epitaxial growth; Gases; Inductors; Plasma temperature; Semiconductor device doping; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.733762

Filename

733762