Title :
New result in 6H SiC “site-competition” epitaxy
Author :
Zelenin, V.V. ; Lebedev, A.A. ; Rastegaeva, M.G. ; Davydov, D.V. ; Chelnokov, V.E.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
The investigation of the 6H-SiC layers grown by CVD in methane-silane-hydrogen system shows that with increase of C/Si ratio in gas phase there is the inversion of type of conductivity. I-DLTS study of grown p-type conductivity layers shows that a main contribution to N A-ND gives a deep acceptor centers, which are close to parameters of usual background centers in layers prepared by sublimation epitaxy method
Keywords :
deep level transient spectroscopy; electrical conductivity; impurity states; semiconductor epitaxial layers; semiconductor growth; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; 6H-SiC epitaxial layer; CVD growth; SiC; background doping; deep acceptor center; electrical conductivity; i-DLTS; methane-silane-hydrogen system; site-competition epitaxy; wide bandgap semiconductor; Argon; Capacitance-voltage characteristics; Conductivity; Epitaxial growth; Gases; Inductors; Plasma temperature; Semiconductor device doping; Silicon carbide; Substrates;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733762
