Title :
10 Gb/s monolithic optical modulator driver with high output voltage of 5 V using InGaP/GaAs HBTs
Author :
Yamauchi, Y. ; Nagata, K. ; Makimura, T. ; Nakajima, O. ; Ito, H. ; Ishibashi, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
We have developed a high-output-voltage monolithically integrated driver circuit for an external optical modulator using InGaP/GaAs HBTs with a collector breakdown voltage, BVceo, of 14 V. The driver circuit consists of an input buffer stage, two differential gain stages, an emitter-follower prefinal stage, and a final differential stage. The circuit operates stably with output signal voltage of 5.5 V at up to 12 Gb/s with a single-phase ECL-level input signal. Error-free operation is confirmed from the NRZ 2/sup 23/-1 PN pattern obtained at 10 Gb/s.
Keywords :
III-V semiconductors; bipolar integrated circuits; driver circuits; electro-optical modulation; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; optical communication equipment; 10 Gbit/s; 14 V; 5 to 5.5 V; InGaP-GaAs; differential gain stages; emitter-follower prefinal stage; error-free operation; external optical modulator; high output voltage; input buffer stage; monolithic optical modulator driver; Driver circuits; Etching; Gallium arsenide; Heterojunction bipolar transistors; Optical buffering; Optical modulation; Optical variables control; Phase control; Stimulated emission; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636968
