• DocumentCode
    2404490
  • Title

    Emission capabilities of GaAs field emitter arrays fabricated using a HCl:H2O2:H2O solution

  • Author

    Yaradou, O. ; Ducroquet, F. ; Kropfield, P. ; Vanoverschelde, A.

  • Author_Institution
    Inst. d´´Electron. et de Microelectron. du Nord, Lille I Univ., Villeneuve d´´Ascq, France
  • Volume
    2
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    361
  • Abstract
    A HCl:H2O:H2O (40:4:1) solution shows highly isotropic features on GaAs etching. The etch rate of this mixture varies strongly with the age and temperature of the solution. For optimized etching, it was shown that these factors do not significantly affect the shape of the emitters but strongly influence the emission capabilities of the arrays
  • Keywords
    III-V semiconductors; electron field emission; etching; gallium arsenide; vacuum microelectronics; GaAs; GaAs field emitter array; HCl:H2O2:H2O solution; fabrication; field emission; isotropic etching; Atomic force microscopy; Field emitter arrays; Gallium arsenide; Microstructure; Rough surfaces; Surface roughness; Surface treatment; Temperature; Thickness measurement; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.733763
  • Filename
    733763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2404490