Title :
Implementation of GaAs E/D HEMT analog components for oversampling analog/digital conversion
Author :
Shen Feng ; Sauerer, J. ; Seitzer, D.
Author_Institution :
Fraunhofer Inst. for Integrated Circuit, Erlangen, Germany
Abstract :
The paper presents design considerations and implementation of analog components, including an operational amplifier, latched comparator, 1 bit D/A converter and second-order modulator, for a fully differential delta-sigma modulation oversampling A/D converter in a 0.5 /spl mu/m GaAs E/D HEMT technology. On-wafer measurements demonstrate that the second-order modulator achieves a 60 dB dynamic range at a Nyquist conversion rate of 5.0 MHz with a sampling frequency of 500 MHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect analogue integrated circuits; gallium arsenide; sigma-delta modulation; 0.5 micron; 1 bit; 500 MHz; D/A converter; GaAs; GaAs E/D HEMT technology; Nyquist conversion rate; analog components; dynamic range; fully differential delta-sigma modulation; latched comparator; operational amplifier; oversampling analog/digital conversion; second-order modulator; D-HEMTs; Delta modulation; Delta-sigma modulation; Differential amplifiers; Dynamic range; Frequency measurement; Gallium arsenide; Operational amplifiers; Paper technology; Sampling methods;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636973
