An 800 MSps track and hold using a 0.3 /spl mu/m AlGaAs-HEMT-technology

Author

Rohmer, G. ; Sauerer, J. ; Seitzer, D. ; Nowotny, U. ; Raynor, B. ; Schneider, J.

Author_Institution

Fraunhofer-Inst. for Integrated Circuit, Erlangen, Germany

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

236

Lastpage

239

Abstract

A feedforward T/H was developed as past of a 200 MSps/10 bit successive approximation ADC using a 0.3 /spl mu/m AlGaAs-HEMT process. This T/H is able to operate up to a clock frequency of 3 GHz and reaches a THD/spl ges/60 dB up to the Nyquist frequency of the ADC at the nominal clock frequency of 800 MHz. This was realized using a special circuit structure with a signal path and a reference path and a new diode bridge switch with an additional auxiliary bridge.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; analogue-digital conversion; feedforward; gallium arsenide; sample and hold circuits; 0.3 micron; 10 bit; 800 MHz to 3 GHz; AlGaAs; AlGaAs-HEMT-technology; Nyquist frequency; clock frequency; diode bridge switch; feedforward T/H circuit; reference path; signal path; successive approximation ADC; track and hold; Apertures; Bridge circuits; Circuit noise; Clocks; Diodes; Frequency; Gallium arsenide; Linearity; Molecular beam epitaxial growth; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636975

Filename

636975