Title :
Ge quantum well electro-absorption modulator with 23 GHz bandwidth
Author :
Chaisakul, P. ; Marris-Morini, D. ; Rouifed, M. -S ; Isella, G. ; Chrastina, D. ; Frigerio, J. ; Le Roux, X. ; Edmond, S. ; Coudevylle, J. -R ; Vivien, L.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
A 23 GHz Ge/SiGe multiple quantum well electro-absorption waveguide modulator is demonstrated with 10 dB extinction ratio (ER). 9 dB ER is achieved with 1V swing with energy consumption limited to 108 fJ per bit.
Keywords :
electro-optical modulation; electroabsorption; optical waveguides; semiconductor quantum wells; Ge quantum well; Ge-SiGe; Ge/SiGe multiple quantum well modulator; bandwidth 23 GHz; electro-absorption modulator; electro-absorption waveguide modulator; energy consumption; voltage 1 V; Erbium; Modulation; Optical buffering; Optical device fabrication; Optical waveguides; Quantum well devices; Silicon germanium; Ge/SiGe; Quantum-confined Stark effect; multiple quantum well modulators;
Conference_Titel :
Optical Interconnects Conference, 2012 IEEE
Conference_Location :
Santa Fe, NM
Print_ISBN :
978-1-4577-1620-1
DOI :
10.1109/OIC.2012.6224474
