DocumentCode
2404669
Title
Humidity resistance of GaAs ICs
Author
Roesch, W.J. ; Winters, R. ; Rubalcava, A.L. ; Ingle, B.
Author_Institution
TriQuint Semicond. Inc., Beaverton, OR, USA
fYear
1994
fDate
16-19 Oct. 1994
Firstpage
251
Lastpage
254
Abstract
A series of investigations into reliability effects of moisture on GaAs structures have lead to the conclusion that GaAs devices have resistance to degradation effects of humidity. This not only provides evidence that GaAs devices are ready for low-cost non-hermetic packages, but that GaAs ICs may have superior reliability performance compared to silicon devices under accelerated humidity conditions.
Keywords
III-V semiconductors; environmental stress screening; gallium arsenide; humidity; integrated circuit packaging; integrated circuit reliability; life testing; moisture; monolithic integrated circuits; plastic packaging; GaAs; accelerated humidity conditions; degradation effects; environmental stress tests; humidity resistance; low-cost nonhermetic packages; moisture; plastic packages; reliability effects; Circuit testing; Gallium arsenide; Humidity; Integrated circuit packaging; Integrated circuit testing; Lead; Life testing; Moisture; Plastic packaging; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location
Phildelphia, PA, USA
ISSN
1064-7775
Print_ISBN
0-7803-1975-3
Type
conf
DOI
10.1109/GAAS.1994.636978
Filename
636978
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