Title :
Three-terminal breakdown effects in power MESFETs
Author :
Hanson, C. ; Hua Fu ; Golio, M.
Author_Institution :
Motorola SPS, Phoenix, AZ, USA
Abstract :
Characterization data, theoretical developments, and the design and reliability impact of three-terminal breakdown is reported. Surface states are shown empirically to play a significant role in breakdown voltage mechanisms. It is illustrated that charge trapping phenomena can dominate the temperature coefficient of the breakdown voltage making analogies to diode characteristics invalid.
Keywords :
characteristics measurement; electric breakdown; electron traps; power MESFET; semiconductor device reliability; surface states; breakdown voltage mechanisms; characterization data; charge trapping phenomena; power MESFETs; reliability impact; surface states; temperature coefficient; three-terminal breakdown effects; Breakdown voltage; Current measurement; Diodes; Electric breakdown; MESFETs; Power amplifiers; Reliability theory; Stress; Temperature control; Time measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636979
