Hot-electron-induced degradation of metal-semiconductor field-effect transistors

Hot-electron trapping in the SiN passivation was found to be a cause for gradual degradation during RF operation of metal-semiconductor field-effect transistors. The time dependence and threshold energy for trap formation was determined by dc and electroluminescence tests. The spatial distribution of trapped electrons was directly observed by a novel high-voltage electron-beam-induced-current imaging technique. Argument was also made for trapping in the SiN instead of at the GaAs/SiN interface.