Title :
Metallic contacts on porous silicon layers
Author :
Angelescu, Anca ; Kleps, Irina
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
The electrical properties of metallic contacts on porous silicon layers have been investigated with the aim to establish the most suitable contact material and preparation conditions for light emission devices. Different materials as: Au, In, Au-In, In-Sn, Al in a variety of preparation conditions have been used as a solid contact on the PS layers. The experimental I-V characteristics of different metal/PS/Si structures are analyzed by theory of Schottky diodes
Keywords :
Schottky diodes; elemental semiconductors; porous semiconductors; semiconductor-metal boundaries; silicon; I-V characteristics; Schottky diode; Si; electrical properties; light emission device; metallic contact; porous silicon layer; Artificial intelligence; Conducting materials; Contacts; Crystallization; Current density; Gold; Silicon; Solid state circuits; Surface morphology; Temperature;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733775
