Title :
Oxidation process effects on porous silicon photoluminescence
Author :
Torchinskaya, T.V. ; Korsunskaya, N.E. ; Sheinkman, M.K. ; Khomenkova, L.Yu. ; Kapitanchuk, A.L. ; Goldstein, Ye ; Savir, E. ; Many, A.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
The effect of preparation regimes on the oxide composition, the number of dangling bonds and photoluminescence spectra have been investigated. The influence of the oxidation process during additional anodization of porous silicon in NaCl electrolyte on photo- and electroluminescence spectra have been studied also
Keywords :
anodisation; dangling bonds; electroluminescence; elemental semiconductors; oxidation; photoluminescence; porous semiconductors; silicon; Si; anodization; dangling bonds; electroluminescence spectra; oxidation; photoluminescence spectra; porous silicon; Current density; Electroluminescence; Etching; Oxidation; Passivation; Photoluminescence; Physics; Radiative recombination; Silicon; Spectroscopy;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733776
