Title :
An equivalent circuit model for deep-trap induced drain-current transient behaviors in HJFETs
Author :
Kunihiro, K. ; Ohno, Y.
Author_Institution :
Microelectron. Res. Lab., NEC Corp., Ibaraki, Japan
Abstract :
A large-signal HJFET model is developed for deep-trap induced drain-current transient behaviors based on two-dimensional device simulations. In the model, electron capture and emission processes for deep traps are replaced by the currents flowing through a diode and a resistor, which are physically deduced from SRH statistics. The model accurately describes the bias and time dependent nonlinear-characteristics of trapping effects. The influence of the trapping effects on RF switching is also discussed.
Keywords :
deep levels; digital simulation; electron capture; electron traps; equivalent circuits; field effect transistor switches; junction gate field effect transistors; semiconductor device models; transient analysis; HJFETs; RF switching; SRH statistics; deep-trap induced drain-current transient behavior; electron capture; emission processes; equivalent circuit model; large-signal model; time dependent nonlinear-characteristics; trapping effects; two-dimensional device simulation; Circuit simulation; Electron emission; Electron traps; Equivalent circuits; FETs; Gallium arsenide; Poisson equations; Pulse measurements; Pulse modulation; Substrates;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636982
