DocumentCode
2404751
Title
Change of the optical properties of porous silicon by post anodization treatments
Author
Pavelescu, G. ; Ciurea, M.L. ; Mihut, L. ; Galeata, G. ; Lengyel, E. ; Baltog, I. ; Roger, J.P.
Author_Institution
Nat. Inst. of Mater. Phys., Bucharest, Romania
Volume
2
fYear
1998
fDate
6-10 Oct 1998
Firstpage
455
Abstract
Optical properties of as prepared porous silicon (PS) were compared with those of thermally treated and chemically cleaned samples. The change of the photoluminescence (PL) spectra correlated with ellipsometric, reflectance and Raman measurements leads us to conclude that the adsorbed species on the PS nanocrystalline structure play an important role in the origin of the PL emission, at least for as-anodized samples
Keywords
Raman spectra; anodisation; elemental semiconductors; ellipsometry; heat treatment; photoluminescence; porous semiconductors; reflectivity; silicon; surface cleaning; Raman spectra; Si; adsorption; anodization; chemical cleaning; ellipsometry; nanocrystalline structure; optical properties; photoluminescence spectra; porous silicon; reflectance; thermal treatment; Chemical processes; Etching; Frequency; Microstructure; Optical films; Optical materials; Physics; Silicon; Surface treatment; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.733777
Filename
733777
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