Title :
Change of the optical properties of porous silicon by post anodization treatments
Author :
Pavelescu, G. ; Ciurea, M.L. ; Mihut, L. ; Galeata, G. ; Lengyel, E. ; Baltog, I. ; Roger, J.P.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest, Romania
Abstract :
Optical properties of as prepared porous silicon (PS) were compared with those of thermally treated and chemically cleaned samples. The change of the photoluminescence (PL) spectra correlated with ellipsometric, reflectance and Raman measurements leads us to conclude that the adsorbed species on the PS nanocrystalline structure play an important role in the origin of the PL emission, at least for as-anodized samples
Keywords :
Raman spectra; anodisation; elemental semiconductors; ellipsometry; heat treatment; photoluminescence; porous semiconductors; reflectivity; silicon; surface cleaning; Raman spectra; Si; adsorption; anodization; chemical cleaning; ellipsometry; nanocrystalline structure; optical properties; photoluminescence spectra; porous silicon; reflectance; thermal treatment; Chemical processes; Etching; Frequency; Microstructure; Optical films; Optical materials; Physics; Silicon; Surface treatment; Tail;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733777
