GaAs MMIC thermal analysis for epoxy-mount compared with AuSn-mount

Author

Nishihori, K. ; Ishida, K. ; Kitaura, Y. ; Uchitomi, N.

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

275

Lastpage

278

Abstract

The effect of attachment for chip-mounting upon the thermal resistance of GaAs power FET modules has been experimentally investigated. The thermal resistance was evaluated by electrical method, which is related to the temperature dependence of Schottky-barrier in the GaAs MESFETs. The thermal resistance of low-cost epoxy-mounted modules was found to be almost the same as that of AuSn-mounted ones for a chip-thickness of 250 /spl mu/m. Applicable expression has also been presented for optimizing thermal design of power MMICs, suggesting that the optimum chip thickness depends on the thermal conductivity of attachment material.

Keywords

III-V semiconductors; field effect MMIC; gallium arsenide; integrated circuit packaging; power integrated circuits; thermal analysis; thermal conductivity; thermal resistance; 250 micron; AuSn; GaAs; MMIC thermal analysis; Schottky barrier; attachment material; chip-mounting attachment; epoxy-mounted modules; optimum chip thickness; power FET modules; thermal conductivity; thermal design; thermal resistance; Conducting materials; Design optimization; Electric resistance; FETs; Gallium arsenide; MESFETs; MMICs; Temperature dependence; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636984

Filename

636984