Title :
Piezoresistance effect in PbTe semiconductor microwires deformed by bending
Author :
Dyntu, M.P. ; Kantser, V.G. ; Meglei, D.F.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
Abstract :
Piezoresistance properties of n- and p-type PbTe semiconductor microwires in a glass coating deformed by bending were studied. It was found that the sample resistance changes linearly with the deformation change. The piezoresistance coefficients are high within the limits (30-200) depending on the diameter and type of the samples. An optimum regime of heat treatment leading the resistance and coefficients of tensor sensitivity to stability in time was found
Keywords :
IV-VI semiconductors; bending; heat treatment; lead compounds; piezoresistance; PbTe; PbTe semiconductor microwire; bending deformation; glass coating; heat treatment; piezoresistance; tensor coefficient; Coatings; Conductivity; Heat treatment; Lead compounds; Microscopy; Physics; Piezoresistance; Resistance heating; Stability; Tensile stress;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733779
