Title :
A highly-linear highly efficient HBT for communications circuits
Author :
Brozovich, R.S. ; Helms, D.R. ; Yang, L.W. ; Komiak, J.J.
Author_Institution :
Martin Marietta Labs., Syracuse, NY, USA
Abstract :
A Martin Marietta Laboratory heterojunction bipolar transistor, which was fabricated using a base-emitter realigned process to reduce surface recombination, has been load pulled to demonstrate that it is simultaneously highly linear and efficient. Achieving a breakthrough in highly linear C-band communications power amplification, the HBT demonstrated a linearity of 30 dB C/I, typically required by communications systems, with 61% power added efficiency at 6 GHz. When tuned for maximum efficiency it achieved 72% P.A.E.
Keywords :
MMIC power amplifiers; bipolar MMIC; circuit tuning; electron-hole recombination; heterojunction bipolar transistors; integrated circuit measurement; microwave links; surface recombination; 6 GHz; 61 to 72 percent; C-band communications; HBT; MMIC amplifiers; Martin Marietta Laboratory; base-emitter realigned process; circuit tuning; communications circuits; heterojunction bipolar transistor; highly-linear transistor; load pull; power added efficiency; power amplification; power amplifiers; surface recombination; Batteries; Circuits; Costs; Doping; Fingers; Heterojunction bipolar transistors; Laboratories; Linearity; MESFETs; Radio frequency;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636986
