A highly-linear highly efficient HBT for communications circuits

Author

Brozovich, R.S. ; Helms, D.R. ; Yang, L.W. ; Komiak, J.J.

Author_Institution

Martin Marietta Labs., Syracuse, NY, USA

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

291

Lastpage

294

Abstract

A Martin Marietta Laboratory heterojunction bipolar transistor, which was fabricated using a base-emitter realigned process to reduce surface recombination, has been load pulled to demonstrate that it is simultaneously highly linear and efficient. Achieving a breakthrough in highly linear C-band communications power amplification, the HBT demonstrated a linearity of 30 dB C/I, typically required by communications systems, with 61% power added efficiency at 6 GHz. When tuned for maximum efficiency it achieved 72% P.A.E.

Keywords

MMIC power amplifiers; bipolar MMIC; circuit tuning; electron-hole recombination; heterojunction bipolar transistors; integrated circuit measurement; microwave links; surface recombination; 6 GHz; 61 to 72 percent; C-band communications; HBT; MMIC amplifiers; Martin Marietta Laboratory; base-emitter realigned process; circuit tuning; communications circuits; heterojunction bipolar transistor; highly-linear transistor; load pull; power added efficiency; power amplification; power amplifiers; surface recombination; Batteries; Circuits; Costs; Doping; Fingers; Heterojunction bipolar transistors; Laboratories; Linearity; MESFETs; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636986

Filename

636986