Title :
DC to 40 GHz broad-band amplifiers using AlGaAs/GaAs HBT´s
Author :
Kuriyama, Y. ; Akagi, J. ; Sugiyama, T. ; Hongo, S. ; Tsuda, K. ; Iizuka, N. ; Obara, M.
Author_Institution :
Mater. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, we report two types of broad-band amplifiers implemented with AlGaAs/GaAs HBT´s. One is a Darlington feedback amplifier and the other is a transimpedance amplifier. In the former circuit, a DC gain of 9.5 dB and a -3 dB bandwidth of 40 GHz were achieved. In the latter circuit, a transimpedance gain of 50 dB/spl Omega/ and a -3 dB bandwidth of 27 GHz were achieved. To our best knowledge, they are the highest speed in each circuit configuration.
Keywords :
DC amplifiers; III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar analogue integrated circuits; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; optical communication equipment; preamplifiers; very high speed integrated circuits; wideband amplifiers; -3 dB bandwidth; 0 to 40 GHz; 27 GHz; 40 GHz; 9.5 dB; AlGaAs-GaAs; DC gain; Darlington feedback amplifier; HBTs; broadband amplifiers; circuit configuration; optical communication applications; transimpedance amplifier; transimpedance gain; Bandwidth; Circuit simulation; Conductivity; Feedback amplifiers; Feedback circuits; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636988
