Microstructural features in amorphous Ge-S-Ga semiconductors

Author

Pamukchieva, V. ; Ivanova, A.G. ; Vassilev, Ventzislav S.

Author_Institution

Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria

Volume

2

fYear

1998

fDate

6-10 Oct 1998

Firstpage

467

Abstract

Variation of the micro-voids volume (Vh), their formation energy (Eh), and module of elasticity (E) with the composition of amorphous Ge-S-Ga films (as-evaporated and UV-exposed) has been studied. Most pronounced change in these parameters after illumination has been observed at GeS₂-based compositions with ~10 at% Ga. The obtained results are compared with those of Ge_90-xS_xGa₁₀ bulk glasses, taking into account the average coordination number (Z). Specific features at Z~2.7 have been found, which can be related to the coexistence of topological and chemical thresholds around this value of Z

Keywords

chalcogenide glasses; elastic moduli; germanium compounds; glass structure; ultraviolet radiation effects; voids (solid); Ge-S-Ga; UV illumination; amorphous semiconductor; composition dependence; coordination number; elastic modulus; evaporated film; formation energy; micro-void volume; microstructure; Amorphous materials; Chemicals; Elasticity; Equations; Glass; Lighting; Optical films; Particle beam optics; Solid state circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.733782

Filename

733782