A Ka-band HBT two-stage LNA

Author

Chu, S.L.G. ; Wohlert, U. ; Jackson, G. ; Adlerstein, M. ; Cole, J.B. ; Zaitlin, M.

Author_Institution

Res. Div., Raytheon Co., Lexington, MA, USA

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

307

Lastpage

310

Abstract

A Ka-band HBT two-stage LNA has been developed. This circuit is to be used in a multifunction T/R module which includes both analog and digital functions. The measured noise figure is 5 dB from 30 GHz to 34 GHz, with an associated gain of better than 7.5 dB. A single-stage LNA has also been developed. The measured noise figure is 4 dB from 33 GHz to 35 GHz with an associated gain of 4 dB. These results are the best yet reported at Ka-band for a HBT LNA. The amplifiers have been designed to minimize the noise measure.

Keywords

III-V semiconductors; bipolar MIMIC; gallium arsenide; heterojunction bipolar transistors; integrated circuit noise; millimetre wave amplifiers; phased array radar; transceivers; 30 to 34 GHz; 33 to 35 GHz; 4 dB; 5 dB; 7.5 dB; GaAs; HBT; Ka-band; multifunction T/R module; noise measure; two-stage LNA; Circuit noise; Fabrication; Gain measurement; Heterojunction bipolar transistors; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; Noise figure; Noise measurement; Phased arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636990

Filename

636990