Title :
A Ka-band HBT two-stage LNA
Author :
Chu, S.L.G. ; Wohlert, U. ; Jackson, G. ; Adlerstein, M. ; Cole, J.B. ; Zaitlin, M.
Author_Institution :
Res. Div., Raytheon Co., Lexington, MA, USA
Abstract :
A Ka-band HBT two-stage LNA has been developed. This circuit is to be used in a multifunction T/R module which includes both analog and digital functions. The measured noise figure is 5 dB from 30 GHz to 34 GHz, with an associated gain of better than 7.5 dB. A single-stage LNA has also been developed. The measured noise figure is 4 dB from 33 GHz to 35 GHz with an associated gain of 4 dB. These results are the best yet reported at Ka-band for a HBT LNA. The amplifiers have been designed to minimize the noise measure.
Keywords :
III-V semiconductors; bipolar MIMIC; gallium arsenide; heterojunction bipolar transistors; integrated circuit noise; millimetre wave amplifiers; phased array radar; transceivers; 30 to 34 GHz; 33 to 35 GHz; 4 dB; 5 dB; 7.5 dB; GaAs; HBT; Ka-band; multifunction T/R module; noise measure; two-stage LNA; Circuit noise; Fabrication; Gain measurement; Heterojunction bipolar transistors; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; Noise figure; Noise measurement; Phased arrays;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636990
