DocumentCode :
2404924
Title :
Electroluminescence from a-SiNx:H/SiO2 multilayers using lateral carrier injection
Author :
Kamyab, Lobna ; Rusli ; Bin, Yu Ming
Author_Institution :
Nanyang Technol. Univ., Singapore, Singapore
fYear :
2010
fDate :
14-16 Dec. 2010
Firstpage :
1
Lastpage :
2
Abstract :
We report the observation of photoluminescence (PL) and electroluminescence (EL) from a-SiNx:H/SiO2 multilayer structures. The luminescence intensity is improved by a thermal annealing process. A new method of effective current injection has been implemented for electrical excitation of these structures whereby the electric field is applied parallel to the plane of the multilayers. Such structures are promising as Si based light sources for Si optoelectronics technology.
Keywords :
amorphous state; annealing; charge injection; electroluminescence; hydrogen; photoluminescence; quantum wells; silicon compounds; SiNx:H-SiO2; current injection; electrical excitation; electroluminescence; lateral carrier injection; luminescence intensity; multilayer multiquantum well structure; photoluminescence; thermal annealing process; Amorphous silicon; Annealing; Electroluminescence; Nonhomogeneous media; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Global Conference (PGC), 2010
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-9882-6
Type :
conf
DOI :
10.1109/PGC.2010.5705975
Filename :
5705975
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2404924
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