• DocumentCode
    2404936
  • Title

    The flatband potential and the rectification in the system ZnIn2S4-H2O(S2-/S2 2-)

  • Author

    Tsiulyanu, I. ; Simashkevich, A. ; Sprinchean, Ala ; Lyalikova, Rimma

  • Author_Institution
    Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
  • Volume
    2
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    475
  • Abstract
    The electric properties of the electrolyte-semiconductor interface in the chains formed by metal auxiliary electrode-electrolyte-multinary layered semiconductors have been investigated. The dependencies of the flatband potential and of the contact potential at the ZnIn2S 4-electrolyte interface on the concentration of S2- and S22- ions were studied. The current-voltage characteristics of the electrolyte-ZnI2S4 contact are determined by the potential barrier which is formed in the semiconductor near the interface
  • Keywords
    contact potential; indium compounds; rectification; semiconductor-electrolyte boundaries; ternary semiconductors; zinc compounds; ZnIn2S4; contact potential; current-voltage characteristics; electric properties; electrolyte-semiconductor interface; flatband potential; multinary layered semiconductor; potential barrier; rectification; Current measurement; Current-voltage characteristics; Electric variables measurement; Electrodes; Iron; Orifices; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.733785
  • Filename
    733785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2404936