Title :
Sub-0.2 micron gate lithography using E-beam, X-ray and optical technologies-an overview
Author :
Studebaker, L.G.
Author_Institution :
Microwave Technol. Div., Hewlett-Packard Co., Santa Rosa, CA, USA
Abstract :
The number of options for performing sub-0.2 um GaAs FET gate lithography has expanded recently to include shaped-beam e-beam systems, prototype X-ray steppers and optical steppers using phase-shift mask (PSM) technology. An overview of the alternatives is presented which may aid in selection of the "best" technology option for a given application.
Keywords :
X-ray lithography; electron beam lithography; field effect transistors; phase shifting masks; photolithography; 0.2 micron; FET gate; GaAs; X-ray steppers; lithography; optical steppers; phase-shift mask; shaped-beam e-beam systems; technology option; Costs; FETs; Gallium arsenide; Gaussian processes; Lithography; Microwave technology; PHEMTs; Prototypes; Resists; Throughput;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636993
