Title :
The future of compound semiconductors for aerospace and defense applications
Author :
Streit, Dwight C. ; Gutierrez-Aitken, Augusto ; Wojtowicz, Michael ; Lai, Richard
Author_Institution :
Space Technol. Sector, Northrop Grumman Corp., Redondo Beach, CA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
We present an overview of the current state of the art and discuss issues associated with competition and the future of compound semiconductor technology, especially for aerospace and defense applications.
Keywords :
CMOS integrated circuits; Ge-Si alloys; III-V semiconductors; MMIC; aerospace; aerospace materials; defence industry; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; low noise amplifiers; power amplifiers; wide band gap semiconductors; CMOS RF; GaN; HBT; HEMT; InP; MMIC; Sb; Sb-based semiconductors; SiGe; aerospace applications; compound semiconductors; defense applications; low-noise amplifiers; power amplifiers; Aerospace industry; Gain; Gallium arsenide; Gallium nitride; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Low-noise amplifiers; MMICs; Millimeter wave technology;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531737
