High resolution InP via holes for millimeter wave device applications

Author

Hur, K.Y. ; McTaggart, R.A. ; Kazior, T.E.

Author_Institution

Res. Div., Raytheon Co., Lexington, MA, USA

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

341

Lastpage

344

Abstract

A Cl/sub 2/:HBr:BCl/sub 3/:Ar-based reactive ion etch process capable of producing high resolution via holes in InP has been developed. Tapered sidewall profiles are obtained using this process as a result of controlled photoresist mask erosion at an optimized etch condition. To demonstrate feasibility of this process for millimeter wave device applications, single-doped AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias have been fabricated.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; masks; millimetre wave field effect transistors; photoresists; sputter etching; AlInAs-GaInAs-InP; BCl/sub 3/; Cl/sub 2/-HBr-BCl/sub 3/-Ar; HBr; HEMTs; high resolution via holes; individually grounded source finger vias; millimeter wave device applications; optimized etch condition; photoresist mask erosion; reactive ion etch process; tapered sidewall profiles; Dry etching; Fingers; HEMTs; Indium phosphide; MODFETs; Millimeter wave devices; Plasma applications; Plasma sources; Plasma temperature; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636998

Filename

636998