Title :
A novel 50-Gbit/s NRZ-RZ converter with retiming function using InP HEMT technology
Author :
Suzuki, Toshihide ; Kawano, Yoichi ; Nakasha, Yasuhiro ; Takahashi, Tsuyoshi ; Makiyama, Kozo ; Hirose, Tatsuya
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
30 Oct.-2 Nov. 2005
Abstract :
We developed a novel electrical non-return-to-zero (NRZ) to return-to-zero (RZ) converter circuit based on a master-slave D-type flip-flop (D-FF). Its decision and re-timing function makes the converter without any delay or phase control circuitry, which are usually employed to adjust the phase alignment of data and clock. The circuit achieved 50-Gbit/s operation by using 0.13 μm gate-length InP HEMT technology. The supply voltage was -5.2 V and the power consumption was 1.1W. A module with the circuit mounted realized 44-Gbit/s operation.
Keywords :
convertors; flip-flops; high electron mobility transistors; indium compounds; optical transmitters; -5.2 V; 0.13 micron; 1.1 W; 50 Gbit/s; D-type flip-flop; HEMT; InP; non-return-zero; optical transmitter; return-zero converter; Circuits; Clocks; Delay; Flip-flops; HEMTs; Indium phosphide; Master-slave; Optical signal processing; Phase control; Voltage;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531749