Assessment of influence of interconnect parasitics on RF Performance of multi-finger SiGe power HBTs

Author

Jiang, Ningyue ; Ma, Zhenqiang ; Ma, Pingxi ; Racanelli, Marco

Author_Institution

Univ. of Wisconsin-Madison, Madison

fYear

2007

fDate

9-12 Oct. 2007

Firstpage

150

Lastpage

153

Abstract

The influence of interconnect parasitics on the RF performance of large-area, multi-finger SiGe power HBTs is assessed. A new modeling approach is used to accurately modeling the interconnect parasitics of power devices and, furthermore, to accurately predicting the overall RF performance of the power devices. The validity of the approach is proved by the excellent agreement between simulations and measurement results obtained on multi-finger SiGe power HBTs of different sizes. It was found that the interconnect parasitics has dominant effects on the smalls-signal characteristics of SiGe power HBTs.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; power bipolar transistors; semiconductor materials; RF performance; SiGe; interconnect parasitics; multifinger power HBT; power devices; smalls-signal characteristics; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit interconnections; Power engineering and energy; Power measurement; Predictive models; Radio frequency; Silicon germanium; Size measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-001-9

Type

conf

DOI

10.1109/EUMC.2007.4405148

Filename

4405148