X-band low noise amplifier using SiGe BiCMOS technology

Author

Patel, V.J. ; Axtell, H.S. ; Cerny, C.L. ; Creech, G.L. ; Drangmeister, R.G. ; Gouker, M.A. ; James, T.L. ; Mattamana, A.G. ; Mbuko, I.O. ; Neidhard, R.A. ; Nykiel, E.B. ; Orlando, P.L. ; Selke, D.L. ; Wiedemann, J.M. ; Quach, T.K.

Author_Institution

Air Force Res. Lab., Wright-Patterson AFB, OH, USA

fYear

2005

fDate

30 Oct.-2 Nov. 2005

Abstract

An X-band (8-12 GHz) low-noise amplifier (LNA) for receiver systems is presented. The microwave monolithic integrated circuit (MMIC) with no external matching components has been demonstrated using a 0.18 μm silicon germanium (SiGe) bipolar CMOS (BiCMOS) technology. The amplifier employs a two-stage topology to achieve low noise figure and high linearity across 8-12 GHz. At 10 GHz the LNA yielded a gain of 24.2 dB, a noise figure of 1.68 dB, and a third-order intercept point of 17.5 dBm. The power dissipation of the circuit is 33.6 mW using a 1.8 V supply voltage. To the best of our knowledge, the circuit achieves the lowest noise figure for a wide bandwidth LNA realized in a SiGe technology.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; flip-chip devices; heterojunction bipolar transistors; integrated circuit noise; low noise amplifiers; 0.18 micron; 1.8 V; 24.2 dB; 33.6 mW; 8 to 12 GHz; BiCMOS; X-band low noise amplifier; flip-chip; heterojunction bipolar transistor; low noise figure; microwave monolithic integrated circuit; multi-chip module; radio frequency integrated circuit; two-stage topology; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; MMICs; Monolithic integrated circuits; Noise figure; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE

Print_ISBN

0-7803-9250-7

Type

conf

DOI

10.1109/CSICS.2005.1531753

Filename

1531753