DocumentCode
2405248
Title
Optimization of absorption and multiplication layers characteristics for high performances avalanche photodiodes on silicon and InGaAs/InP heterostructures
Author
Budianu, Elena ; Purica, Munizer
Author_Institution
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Volume
2
fYear
1998
fDate
6-10 Oct 1998
Firstpage
519
Abstract
The paper presents a detailed analysis of structure characteristics influence on the performances of avalanche photodiode with multiplication region separates from optical absorption region. SAM-APD on InGaAs/InP heterostructures and reach-through on silicon comparatively, establishing a unified calculation method for the optimum values of the doping levels, the thickness of structure layers and the width of avalanche region
Keywords
III-V semiconductors; avalanche photodiodes; elemental semiconductors; gallium arsenide; indium compounds; silicon; InGaAs-InP; InGaAs/InP heterostructure; SAM-APD; Si; avalanche photodiode; multiplication layer; optical absorption layer; optimization; silicon reach-through structure; Absorption; Avalanche photodiodes; Communication systems; Indium gallium arsenide; Indium phosphide; Optical sensors; Pulse measurements; Semiconductor materials; Silicon; Volume measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.733801
Filename
733801
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