Title :
Optimization of absorption and multiplication layers characteristics for high performances avalanche photodiodes on silicon and InGaAs/InP heterostructures
Author :
Budianu, Elena ; Purica, Munizer
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
The paper presents a detailed analysis of structure characteristics influence on the performances of avalanche photodiode with multiplication region separates from optical absorption region. SAM-APD on InGaAs/InP heterostructures and reach-through on silicon comparatively, establishing a unified calculation method for the optimum values of the doping levels, the thickness of structure layers and the width of avalanche region
Keywords :
III-V semiconductors; avalanche photodiodes; elemental semiconductors; gallium arsenide; indium compounds; silicon; InGaAs-InP; InGaAs/InP heterostructure; SAM-APD; Si; avalanche photodiode; multiplication layer; optical absorption layer; optimization; silicon reach-through structure; Absorption; Avalanche photodiodes; Communication systems; Indium gallium arsenide; Indium phosphide; Optical sensors; Pulse measurements; Semiconductor materials; Silicon; Volume measurement;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733801
