Dosimetric characteristics of the indium phosphide based photoconvertors

Author

Andronic, I. ; Simashkevich, A. ; Potlog, T. ; Sherban, D. ; Ketrush, P.

Author_Institution

Lab. of Semicond. Phys., State Univ., Kishinev, Moldova

Volume

2

fYear

1998

fDate

6-10 Oct 1998

Firstpage

549

Abstract

The results of dosimetric characteristics investigations for the detectors fabricated on the basis of ITO-InP structures of SIS types are given. It was shown that between short circuit current and X-rays irradiation dose power there is a linear dependance as in the case of the studied convertors lumination with integral light from the visible region of spectrum. The sensitivity of ITO-InP structures functioning as X-ray detectors is of 3 μA/(rad min) cm² which indicates the possibility of their utilization as an active element of ionizing radiation detecting devices

Keywords

III-V semiconductors; X-ray detection; dosimeters; indium compounds; photoelectric devices; semiconductor counters; short-circuit currents; ITO-InP; ITO-InP SIS structure; InSnO-InP; X-ray detector; dosimetry; indium phosphide photoconvertor; ionizing radiation detector; short circuit current; Charge carriers; Converters; Dielectric substrates; Electrons; Fabrication; Indium phosphide; Ionizing radiation; Photoconductivity; Radiation detectors; Short circuit currents;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.733809

Filename

733809