Title :
Dosimetric characteristics of the indium phosphide based photoconvertors
Author :
Andronic, I. ; Simashkevich, A. ; Potlog, T. ; Sherban, D. ; Ketrush, P.
Author_Institution :
Lab. of Semicond. Phys., State Univ., Kishinev, Moldova
Abstract :
The results of dosimetric characteristics investigations for the detectors fabricated on the basis of ITO-InP structures of SIS types are given. It was shown that between short circuit current and X-rays irradiation dose power there is a linear dependance as in the case of the studied convertors lumination with integral light from the visible region of spectrum. The sensitivity of ITO-InP structures functioning as X-ray detectors is of 3 μA/(rad min) cm2 which indicates the possibility of their utilization as an active element of ionizing radiation detecting devices
Keywords :
III-V semiconductors; X-ray detection; dosimeters; indium compounds; photoelectric devices; semiconductor counters; short-circuit currents; ITO-InP; ITO-InP SIS structure; InSnO-InP; X-ray detector; dosimetry; indium phosphide photoconvertor; ionizing radiation detector; short circuit current; Charge carriers; Converters; Dielectric substrates; Electrons; Fabrication; Indium phosphide; Ionizing radiation; Photoconductivity; Radiation detectors; Short circuit currents;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733809
