Title :
TiO2 anodic oxide films for oxygen gas sensors
Author :
Podaru, C. ; Avramescu, V. ; Enache, R. ; Stoica, G.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
This paper presents a method used to produce TiO2 sensitive layers based on the selective anodization of the titanium thin film realised by vacuum evaporation. Photoresist was used as mask for anodization. The thickness of the TiO2 layers obtained in this experiment was between 1000-1200 Å. IR and X-ray investigation were performed in order to characterize the structure of the layer. Sensitivity to O2 was measured using a dedicated micromachine silicon structure. A quasilinear dependence of the resistivity of the TiO2 layer versus the O2 concentration was observed in the range of 100-10000 ppm
Keywords :
X-ray diffraction; anodised layers; electrical resistivity; gas sensors; infrared spectra; microsensors; oxygen; semiconductor materials; semiconductor thin films; titanium compounds; IR spectra; O2; TiO2; TiO2 anodic oxide film; X-ray diffraction; electrical resistivity; oxygen gas sensor; photoresist mask; selective anodization; silicon micromachined structure; titanium thin film; vacuum evaporation; Electrodes; Gas detectors; Manufacturing; Oxygen; Resists; Sensor arrays; Sensor phenomena and characterization; Silicon; Titanium; Voltage;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733813
