Title :
A 2μm InGaP/GaAs HBT matrix amplifier with 15dB gain and 41GHz bandwidth
Author :
Chatchaikarn, Aroonchat ; Gao, H. ; Li, G.P. ; Chen, Y.C. ; Yang, Daniel
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
A broadband matrix amplifier occupying a chip area of 1.5×1.6 mm2 implemented with commercially available 2μm InGaP/GaAs HBT technology is demonstrated with a gain of 15dB and 41GHz 3-dB bandwidth, as well as a gain-bandwidth product of 231. At a biasing collector current density (Jc) of 50 kA/cm2, the 2 μm InGaP/GaAs HBT has ft and fmax of 55 and 62GHz respectively with MTTF of 2.8×106 hrs or approximately 320 years. Comparing to other published results using the figure of merits of gain-bandwidth product (GBP) per transistor ft and fmax, this amplifier is believed to be among the best in single chip distributed and matrix amplifiers implemented in any bipolar technologies.
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MIMIC; gallium arsenide; gallium compounds; indium compounds; wideband amplifiers; 15 dB; 2 micron; 41 GHz; 55 GHz; 62 GHz; HBT matrix amplifier; InGaP-GaAs; broadband matrix amplifier; collector current density; gain-bandwidth product; Bandwidth; Bipolar transistors; Broadband amplifiers; Distributed amplifiers; FETs; Gain; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Transmission line matrix methods;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531767
