A 2μm InGaP/GaAs HBT matrix amplifier with 15dB gain and 41GHz bandwidth

Author

Chatchaikarn, Aroonchat ; Gao, H. ; Li, G.P. ; Chen, Y.C. ; Yang, Daniel

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA, USA

fYear

2005

fDate

30 Oct.-2 Nov. 2005

Abstract

A broadband matrix amplifier occupying a chip area of 1.5×1.6 mm² implemented with commercially available 2μm InGaP/GaAs HBT technology is demonstrated with a gain of 15dB and 41GHz 3-dB bandwidth, as well as a gain-bandwidth product of 231. At a biasing collector current density (J_c) of 50 kA/cm², the 2 μm InGaP/GaAs HBT has f_t and f_max of 55 and 62GHz respectively with MTTF of 2.8×10⁶ hrs or approximately 320 years. Comparing to other published results using the figure of merits of gain-bandwidth product (GBP) per transistor f_t and f_max, this amplifier is believed to be among the best in single chip distributed and matrix amplifiers implemented in any bipolar technologies.

Keywords

III-V semiconductors; MMIC amplifiers; bipolar MIMIC; gallium arsenide; gallium compounds; indium compounds; wideband amplifiers; 15 dB; 2 micron; 41 GHz; 55 GHz; 62 GHz; HBT matrix amplifier; InGaP-GaAs; broadband matrix amplifier; collector current density; gain-bandwidth product; Bandwidth; Bipolar transistors; Broadband amplifiers; Distributed amplifiers; FETs; Gain; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Transmission line matrix methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE

Print_ISBN

0-7803-9250-7

Type

conf

DOI

10.1109/CSICS.2005.1531767

Filename

1531767