Title :
A 40-G samples/sec track & hold amplifier in 0.18μm SiGe BiCMOS technology
Author :
Shahramian, Shahriar ; Carusone, Anthony Chan ; Voinigescu, Sorin P. ; Rogers, Edward S., Sr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fDate :
30 Oct.-2 Nov. 2005
Abstract :
This paper presents a 40-G samples/sec track & hold amplifier (THA). The chip is manufactured in 0.18μm SiGe BiCMOS and operates from a 3.6-V supply. The total power consumption is 540mW with a chip area of 1.1mm2. Time domain measurements illustrate 40-GHz sampling with 5, 8 and 10 GHz sinusoidal input signals. S-parameter measurements show a 3-dB bandwidth of 43 GHz in track mode. The P1dB and IIP3 are -10.5 dB and 2.5 dB, respectively, at 12 GHz. The measured THD for a 19 GHz input signal is -27 dB at the input compression point and the SFDR is -30 dB for a 19 GHz input signal. When accounting for the 10 dB noise figure, the resolution of the THA is estimated to exceed 4 bits for signals with 40 Gb/s data rates.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; millimetre wave amplifiers; sample and hold circuits; 0.18 micron; 10 GHz; 10 dB; 12 GHz; 19 GHz; 3.6 V; 40 GHz; 40 Gbit/s; 43 GHz; 5 GHz; 540 mW; 8 GHz; BiCMOS technology; S-parameter; SiGe; time domain measurements; track & hold amplifier; Bandwidth; BiCMOS integrated circuits; Energy consumption; Germanium silicon alloys; Manufacturing; Sampling methods; Scattering parameters; Semiconductor device measurement; Silicon germanium; Time measurement;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531773
