Title :
Design of a 2 V 3 GHz low-noise bipolar wideband amplifier
Author :
Lee, Wilson ; Filanovsky, I.M.
Author_Institution :
Alberta Univ., Edmonton, Alta., Canada
Abstract :
A low-power RF wideband amplifier is presented. It has a 24.3 dB power gain, -3 dB bandwidth of 3.2 GHz, and consumes 23.7 mW power with a 2 V power supply. The circuit is implemented using Si bipolar process, NT25, which has fT of 25 GHz. Both input and output impedances are matched at 50 ohms. This amplifier is suitable for applications that require wide bandwidth and high linearity in the range of 1 to 3 GHz
Keywords :
UHF amplifiers; bipolar analogue integrated circuits; impedance matching; integrated circuit noise; low-power electronics; wideband amplifiers; 2 V; 23.7 mW; 24.3 dB; 3 GHz; 3.2 GHz; NT25; Si; Si bipolar circuit; design; impedance matching; low-noise low-power RF wideband amplifier; Bandwidth; Bonding; Broadband amplifiers; Capacitors; Circuits; Impedance matching; Negative feedback; Radio frequency; Voltage; Wire;
Conference_Titel :
Circuits and Systems, 1999. 42nd Midwest Symposium on
Conference_Location :
Las Cruces, NM
Print_ISBN :
0-7803-5491-5
DOI :
10.1109/MWSCAS.1999.867763
