• DocumentCode
    2405689
  • Title

    Design of a 2 V 3 GHz low-noise bipolar wideband amplifier

  • Author

    Lee, Wilson ; Filanovsky, I.M.

  • Author_Institution
    Alberta Univ., Edmonton, Alta., Canada
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    830
  • Abstract
    A low-power RF wideband amplifier is presented. It has a 24.3 dB power gain, -3 dB bandwidth of 3.2 GHz, and consumes 23.7 mW power with a 2 V power supply. The circuit is implemented using Si bipolar process, NT25, which has fT of 25 GHz. Both input and output impedances are matched at 50 ohms. This amplifier is suitable for applications that require wide bandwidth and high linearity in the range of 1 to 3 GHz
  • Keywords
    UHF amplifiers; bipolar analogue integrated circuits; impedance matching; integrated circuit noise; low-power electronics; wideband amplifiers; 2 V; 23.7 mW; 24.3 dB; 3 GHz; 3.2 GHz; NT25; Si; Si bipolar circuit; design; impedance matching; low-noise low-power RF wideband amplifier; Bandwidth; Bonding; Broadband amplifiers; Capacitors; Circuits; Impedance matching; Negative feedback; Radio frequency; Voltage; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1999. 42nd Midwest Symposium on
  • Conference_Location
    Las Cruces, NM
  • Print_ISBN
    0-7803-5491-5
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1999.867763
  • Filename
    867763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2405689