Title :
The role of doping profile on power gain of SiGe HBTs under constant Ge strain
Author :
Jiang, Ningyue ; Ma, Zhenqiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
The power gain characteristics of SiGe HBTs with constant total Ge strain in the base region, but different doping profiles, are studied. It is found that the doping profile is the dominant factor in determining fmax and high-frequency power gain, while Ge profile only plays an insignificant role. In addition, CE and CB configurations show distinct characteristics of power gain sensitivity on base doping profiles and DC bias.
Keywords :
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor doping; DC bias; SiGe; doping profile; heterojunction bipolar transistors; microwave power amplifiers; power gain sensitivity; BiCMOS integrated circuits; Capacitive sensors; Doping profiles; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Microwave amplifiers; Power amplifiers; Silicon germanium;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531778
