Collector optimization in advanced SiGe HBT technologies

Author

Liu, Q.Z. ; Orner, B.A. ; Lanzerotti, L. ; Dahlstrom, M. ; Hodge, W. ; Gordon, M. ; Johnson, J. ; Gautsch, M. ; Greco, J. ; Rascoe, J. ; Ahlgren, D. ; Joseph, A. ; Dunn, J.

Author_Institution

IBM SRDC, USA

fYear

2005

fDate

30 Oct.-2 Nov. 2005

Abstract

With the advancement of the fT/fMAX performance scaling of SiGe HBTs the breakdown voltage (BVCBO/BVCEO) reduces commensurately, causing design related concerns. It is important, therefore, that multiple fT/BVCEO devices be offered in the RF technologies to meet the varying needs of the communication products. Unlike the GaAs technologies, the SiGe BiCMOS technologies are capable of integrating various flavors of fT/BVCEO SiGe HBT devices at a technology node. In this work, we investigate the tradeoff in fT-BVCEO for advanced SiGe HBTs by various collector optimization schemes such as, subcollector dopant species and concentration, epilayer thickness, SIC and other layout techniques.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; semiconductor device breakdown; BVCBO; BVCEO; BiCMOS technologies; GaAs; HBT devices; HBT technologies; SiGe; breakdown voltage; collector optimization schemes; subcollector dopant concentration; subcollector dopant species; BiCMOS integrated circuits; CMOS technology; Delay; Design optimization; Doping; Electric breakdown; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon carbide; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE

Print_ISBN

0-7803-9250-7

Type

conf

DOI

10.1109/CSICS.2005.1531779

Filename

1531779